Multipage Read for nand Flash

NAND flash memories achieve very high densities through a series connection of all the cells in a bitline. In current memories, each wordline is read independently by biasing all the other cells to act as pass transistors and sensing all the bitlines in parallel. This paper proposes a new method which reads multiple wordlines simultaneously and returns a combination of their stored information. This multi-page read method is shown to be useful for equalizing the inter-cell interference, reduce the damage caused by erase operations, and speed up the decoding of a certain class of codes.